npn silicon planar medium power darlington transistors issue 1 ? march 94 features * 80 volt v ceo * 1 amp continuous current * gain of 2k at i c =1 amp *p tot = 1 watt absolute maximum ratings. parameter symbol ztx602 ZTX603 unit collector-base voltage v cbo 80 100 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a power dissipation at t amb = 25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx602 ZTX603 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 80 100 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 60 80 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 10 v i e =100 m a collector cut-off current i cbo 0.01 10 0.01 10 m a m a m a m a v cb =60v v cb =80v v cb =60v, t amb =100c v cb =80v, t amb =100c emitter cut-off current i ebo 0.1 0.1 m a v eb =8v colllector-emitter cut-off current i ces 10 10 m a m a v ces =60v v ces =80v collector-emitter saturation voltage v ce(sat) 1.0 1.0 1.0 1.0 v v i c =400ma, i b =0.4ma* i c =1a, i b =1ma* base-emitter saturation voltage v be(sat) 1.8 1.8 v i c =1a, i b =1ma* base-emitter turn-on voltage v be(on) 1.7 1.7 v ic=1a, v ce =5v* e-line to92 compatible ztx602 ZTX603 3-209 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx602 ZTX603 unit conditions. min. max. min. max. static forward current transfer ratio h fe 2k 5k 2k 0.5k 100k 2k 5k 2k 0.5k 100k i c =50ma, v ce =5v i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 150 mhz i c =100ma, v ce =10v f=20mhz input capacitance c ibo 90 typical pf v eb =500mv, f=1mhz output capacitance c obo 15 typical pf v cb =10v, f=1mhz switching times t on 0.5 typical m s i c =500ma, v ce =10v i b1 =i b2 =0.5ma t off 1.1 typical m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% the maximum permissible operational temperature can be obtained from this graph using the following equation t amb ( max ) = power ( max ) - power ( act ) 0.0057 + 25 c t amb(max ) = maximum operating ambient temperature power(max) = maximum power dissipation figure, obtained from the above graph for a given v ce and source resistance (r s ) power(actual)= actual power dissipation in users circuit ztx602 ZTX603 c b e voltage derating graph v ce - collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0 0.2 r s = 50k w 1 10 100 dc conditions r s = 200k w r s = maximum power dissipation (w) 200 r s = 1m w r s = 10k w ZTX603 ztx602 3-210
npn silicon planar medium power darlington transistors issue 1 ? march 94 features * 80 volt v ceo * 1 amp continuous current * gain of 2k at i c =1 amp *p tot = 1 watt absolute maximum ratings. parameter symbol ztx602 ZTX603 unit collector-base voltage v cbo 80 100 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a power dissipation at t amb = 25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx602 ZTX603 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 80 100 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 60 80 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 10 v i e =100 m a collector cut-off current i cbo 0.01 10 0.01 10 m a m a m a m a v cb =60v v cb =80v v cb =60v, t amb =100c v cb =80v, t amb =100c emitter cut-off current i ebo 0.1 0.1 m a v eb =8v colllector-emitter cut-off current i ces 10 10 m a m a v ces =60v v ces =80v collector-emitter saturation voltage v ce(sat) 1.0 1.0 1.0 1.0 v v i c =400ma, i b =0.4ma* i c =1a, i b =1ma* base-emitter saturation voltage v be(sat) 1.8 1.8 v i c =1a, i b =1ma* base-emitter turn-on voltage v be(on) 1.7 1.7 v ic=1a, v ce =5v* e-line to92 compatible ztx602 ZTX603 3-209 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx602 ZTX603 unit conditions. min. max. min. max. static forward current transfer ratio h fe 2k 5k 2k 0.5k 100k 2k 5k 2k 0.5k 100k i c =50ma, v ce =5v i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 150 mhz i c =100ma, v ce =10v f=20mhz input capacitance c ibo 90 typical pf v eb =500mv, f=1mhz output capacitance c obo 15 typical pf v cb =10v, f=1mhz switching times t on 0.5 typical m s i c =500ma, v ce =10v i b1 =i b2 =0.5ma t off 1.1 typical m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% the maximum permissible operational temperature can be obtained from this graph using the following equation t amb ( max ) = power ( max ) - power ( act ) 0.0057 + 25 c t amb(max ) = maximum operating ambient temperature power(max) = maximum power dissipation figure, obtained from the above graph for a given v ce and source resistance (r s ) power(actual)= actual power dissipation in users circuit ztx602 ZTX603 c b e voltage derating graph v ce - collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0 0.2 r s = 50k w 1 10 100 dc conditions r s = 200k w r s = maximum power dissipation (w) 200 r s = 1m w r s = 10k w ZTX603 ztx602 3-210
typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) i c - collector current (amps) v ce - collector voltage (volts) safe operating area 11000 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 100s 0 0.4 0.01 0.1 10 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i c - collector current (amps) v be(sat) v i c v b e (sat) - (v olts) 0.6 0.01 10 0.1 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c /i b =100 i c /i b =100 i c - collector current (amps) h fe v i c h fe - gain normalised to 1 amp 0.001 0.01 10 0.1 1 0.5 1.0 1.5 2.0 2.5 v ce =5v i c - collector current (amps) v be(on) v i c v b e - ( v olts) 0.6 1.0 1.4 1.8 0.01 0.1 110 0.2 v ce =5v -55c +25c +100c 0.4 0.8 1.2 1.6 2.2 0.2 -55c +25c +100c +175c -55c +25c +100c +175c 0.4 -55c +25c +100c ztx602 ZTX603 2.0 ztx602 ZTX603 3-211
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